Infineon Technologies AG (FSE/NYSE: IFX) today announced a new generation of power semiconductor products for DC/DC converters for computers, telecommunications equipment and consumer electronics. The new OptiMOS? 3 30V N-Channel MOSFET family increases the reliability and energy efficiency of standard power products by 1% to 1.3% and leads the industry in key power conversion metrics such as on-resistance, power density and gate charge. Level.
Many power products, such as power supplies for servers, laptops, plasma or LCD TVs, and gaming consoles, require greater energy efficiency to meet energy savings and reduce system power consumption. For example, in the United States, a power source converts a 110V standard AC voltage into a DC power required by an electronics subsystem, which consumes approximately 6% of the power. In the operating mode, about 10% to 20% of the electrical energy is wasted in the form of heat.
As a global leader in power semiconductors (IMS Research Market Research, September 2006), Infineon has designed the OptiMOS3 family of products specifically designed to improve the performance of low voltage power converters. This product family typically increases energy efficiency by 1% to 1.3% compared to the previous generation. This increase does not seem to be large, but it is difficult to achieve from a technical point of view, and it can achieve a large amount of energy savings. If the energy efficiency of the global 1,200W server power supply system is increased by 1%, about 360 megawatts of electricity can be saved in the whole year, which is equivalent to the power generation of a traditional power plant.
"The OptiMOS3 family of products not only helps power supply designers achieve the power requirements of future system designs, but also contributes to energy savings," said Andreas Urschitz, senior director of power management and supply business at Infineon. "Energy efficiency improvements, improved switching characteristics, power Higher density and greater reliability not only improve the performance and energy efficiency of power solutions, but also reduce costs."
With the outstanding features of OptiMOS3, power supply manufacturers can achieve ideal performance with fewer devices, reducing the number of MOSFETs typically required for DC/DC converters by 33%. Infineon also adopted a new high-performance Shrink SuperSO8 (S3O8) 3mm X 3mm package for this device, which will reduce the MOSFET onboard space required for converter system design by 60%.
In addition to developing small DC/DC converters, OptiMOS3 devices can also be used to increase the output power of a given standard size power supply. In addition, OptiMOS3 extends the life of laptop batteries and reduces the energy consumption of servers and telecommunications systems.
Devices fabricated using the N-Channel OptiMOS3 process feature the industry's lowest on-resistance (RDS(ON)), ultra-low gate charge, and other features that give the device unique performance. For example, the OptiMOS 3 power MOSFET in the SuperSO8 package has a maximum on-resistance of only 1.6mΩ (milliohms), which is about 30% lower than the nearest equivalent. Low on-resistance minimizes conduction losses and conduction power consumption, increasing power density.
The lower gate charge makes the OptiMOS 3 device easy to drive, so lower cost drivers can be used. In addition, the improvement of the figure of merit (FOM) results in a 30% reduction in the load on the drive, which greatly reduces the operating temperature of the drive. At 400kHZ switching frequency, the drop is about 10 degrees Celsius compared to the best comparable products, which reduces the Heat energy consumption.
Compared to the industry-leading OptiMOS 2, the new OptiMOS 3 delivers significant improvements in several areas, including a 30% reduction in on-resistance and a 30% improvement in the figure of merit, while reducing package size (S308) compared to OptiMOS 2 Similar performance can still be provided in 60% of cases.
Many power products, such as power supplies for servers, laptops, plasma or LCD TVs, and gaming consoles, require greater energy efficiency to meet energy savings and reduce system power consumption. For example, in the United States, a power source converts a 110V standard AC voltage into a DC power required by an electronics subsystem, which consumes approximately 6% of the power. In the operating mode, about 10% to 20% of the electrical energy is wasted in the form of heat.
As a global leader in power semiconductors (IMS Research Market Research, September 2006), Infineon has designed the OptiMOS3 family of products specifically designed to improve the performance of low voltage power converters. This product family typically increases energy efficiency by 1% to 1.3% compared to the previous generation. This increase does not seem to be large, but it is difficult to achieve from a technical point of view, and it can achieve a large amount of energy savings. If the energy efficiency of the global 1,200W server power supply system is increased by 1%, about 360 megawatts of electricity can be saved in the whole year, which is equivalent to the power generation of a traditional power plant.
"The OptiMOS3 family of products not only helps power supply designers achieve the power requirements of future system designs, but also contributes to energy savings," said Andreas Urschitz, senior director of power management and supply business at Infineon. "Energy efficiency improvements, improved switching characteristics, power Higher density and greater reliability not only improve the performance and energy efficiency of power solutions, but also reduce costs."
With the outstanding features of OptiMOS3, power supply manufacturers can achieve ideal performance with fewer devices, reducing the number of MOSFETs typically required for DC/DC converters by 33%. Infineon also adopted a new high-performance Shrink SuperSO8 (S3O8) 3mm X 3mm package for this device, which will reduce the MOSFET onboard space required for converter system design by 60%.
In addition to developing small DC/DC converters, OptiMOS3 devices can also be used to increase the output power of a given standard size power supply. In addition, OptiMOS3 extends the life of laptop batteries and reduces the energy consumption of servers and telecommunications systems.
Devices fabricated using the N-Channel OptiMOS3 process feature the industry's lowest on-resistance (RDS(ON)), ultra-low gate charge, and other features that give the device unique performance. For example, the OptiMOS 3 power MOSFET in the SuperSO8 package has a maximum on-resistance of only 1.6mΩ (milliohms), which is about 30% lower than the nearest equivalent. Low on-resistance minimizes conduction losses and conduction power consumption, increasing power density.
The lower gate charge makes the OptiMOS 3 device easy to drive, so lower cost drivers can be used. In addition, the improvement of the figure of merit (FOM) results in a 30% reduction in the load on the drive, which greatly reduces the operating temperature of the drive. At 400kHZ switching frequency, the drop is about 10 degrees Celsius compared to the best comparable products, which reduces the Heat energy consumption.
Compared to the industry-leading OptiMOS 2, the new OptiMOS 3 delivers significant improvements in several areas, including a 30% reduction in on-resistance and a 30% improvement in the figure of merit, while reducing package size (S308) compared to OptiMOS 2 Similar performance can still be provided in 60% of cases.
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